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Collaborative Research: ASCENT: Wafer-Scale Sub-THz Reflectarray for Electrical Needle Beam Forming and Steering
NSF
About This Grant
In this ASCENT project, the team aims to develop a set of semiconductor technologies, including new device fabrication, large-scale heterogeneous integration, and robust beam-alignment system architectures, to achieve electrically controlled collimation of electromagnetic waves in sub-terahertz (sub-THz) frequency bands at low cost. Compared to the existing 5G wireless bands below 100 GHz, the sub-THz bands offer unprecedented wide bandwidth that can enable ultra-fast data rate for data center networking and wireless infrastructure, as well as high precision for radar and imaging. The electronic hardware developed in this project provides a highly desirable function for most sub-THz systems -- focusing the beam power within one degree in space (hence the term "needle beam" in the project title) with high-precision electronic control of the beam direction. The new hardware architecture enables wireless communication systems to achieve a high data rate up to 120 Gbps over a distance greater than one kilometer. It also enables radar imaging systems to achieve high-resolution sensing of the ambient environment, which is critical for all-weather safe operation of autonomous vehicles. In addition, this project not only provides extensive graduate researcher training in high-frequency circuit designs and advanced semiconductor manufacturing but also promotes STEM education through various programs. Needle beam forming at 140 GHz requires large (> 70x70 millimeter square) electronic phase-controlling surfaces with low signal loss at high frequencies. Therefore, transistors fabricated using advanced lithography are needed. Recent demonstrations of sub-THz reflectarray using either tiled complementary metal-oxide-semiconductor (CMOS) FinFET chips or chip package modules have excessively high fabrication and assembly costs. In this project, the team explores a new direct wafer-scale integration approach through low-temperature fabrications of custom metal-insulator-semiconductor-insulator-metal (MISIM) variable capacitance devices and high-efficiency sub-THz antennas on top of a foundry-processed integrated-circuit glass substrate. Without using any expensive advanced lithography, the devices can still achieve low-loss phase shifting of sub-THz signals, hence significantly reducing the cost of the needle-beam-forming system. The project also investigates new reflectarray circuits that perform self-correction of device defects and process variations, as well as new reflectarray transceiver architectures that enable compact overall system form factor and high-precision beam alignment. This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
Focus Areas
Eligibility
How to Apply
Up to $700K
2029-09-30
One-time $749 fee · Includes AI drafting + templates + PDF export
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